Growth of thin single crystal NiSi2 films on Si surfaces, a field ion microscope study
- 1 September 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (5) , 524-526
- https://doi.org/10.1063/1.96114
Abstract
Thin single crystal NiSi2 films have been grown epitaxially on the [111] oriented Si tip surface in ultrahigh vacuum (UHV). A 180° change in the axial symmetry is found for the field ion images taken before and after the growth of the silicide layers. From this observation and a computer simulation of the field ion images we conclude that the Si‐NiSi2 interface has the B‐type structure. The field ion image of the NiSi2 films is good enough to reveal the atomic structure of the (111) Ni layer.Keywords
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