The influence of inversion domains on surface morphology in GaN grown by molecular beam epitaxy
- 15 December 1997
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (24) , 3486-3488
- https://doi.org/10.1063/1.120367
Abstract
Growth of GaN by rf-plasma molecular beam leads to different surface morphologies for nitrogen-rich growth versus gallium-rich growth. Nitrogen-rich growth produces a significant density of pyramidal hillocks while gallium-rich growth results in flat surfaces. Differences in surface morphology were directly linked to the presence of inversion domains which originated in the nucleation layer. Nitrogen-rich growth and growth under atomic hydrogen enhanced the growth rate of inversion domains with respect to the surrounding matrix, while growth under Ga-rich conditions resulted in a more nearly equal growth rate.Keywords
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