BH InGaAsP Lasers with an LPE Grown Semi-Insulating Layer
- 1 June 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (6A) , L435
- https://doi.org/10.1143/jjap.25.l435
Abstract
DCPBH lasers with LPE grown cobalt-doped semi-insulating InP layer for lateral current confinement are described. The lasers with this cobalt-InP layer have higher external quantum efficiencies than the ones without. Low threshold current lasers (15–35 mA) are obtained for active region width of 2–3 µm.Keywords
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