High-resistivity (>105 Ω cm) InP layers by liquid phase epitaxy
- 15 August 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (4) , 378-380
- https://doi.org/10.1063/1.94350
Abstract
Experimental conditions suitable for the liquid phase epitaxial growth of InP epilayers with resistivities >105 Ω cm have been investigated. It has been found that the resistivities of Fe‐doped InP layers are, in fact, less than the resistivity of an undoped InP control sample. Furthermore, the resistivity decreases monotonically as more Fe dopant is added to the melt. When Co is used as a dopant, the same growth conditions used for the Fe‐doped InP produce InP epilayers with ρ>105 Ω cm. High‐resistivity InP layers have been reproducibly grown with 1.0 and 0.6 at. % of Co added to the melt. The high‐resistivity InP epilayers have been grown at various temperatures between 715 and 630 °C.Keywords
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