Energy dependence of the electron-phonon coupling in a thin-layer GaAs/AlAs superlattice
- 15 May 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (15) , 9061-9064
- https://doi.org/10.1103/physrevb.37.9061
Abstract
The first- and second-order resonant Raman scattering of a thin-layer GaAs/AlAs superlattice has been studied over a wide incident-photon-energy range. The exponential energy dependence of the ratio between the GaAs and AlAs LO-phonon modes was observed. The qualitative origin of this behavior is found to be connected with the way the excited electron-hole pair is alternatively coupled to the GaAs and AlAs phonon fields.Keywords
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