Second-order Raman scattering by confined optical phonons and interface vibrational modes in GaAs-AlAs superlattices
- 15 July 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (2) , 1412-1414
- https://doi.org/10.1103/physrevb.32.1412
Abstract
The second-order Raman spectrum of the confined GaAs-like optical phonons in a GaAs-AlAs superlattice is reported. For laser energies in resonance with the first exciton in the GaAs quantum wells, the experiments show a series of sharp peaks that can be attributed to combinations of confined phonons of symmetry. An additional broader peak corresponds to the combination of the GaAs-like and AlAs-like interface vibrational modes previously reported in the first-order spectra. The resonance profile of the overtones and combinations of confined phonons is also presented.
Keywords
This publication has 11 references indexed in Scilit:
- Interface Vibrational Modes in GaAs-AlAs SuperlatticesPhysical Review Letters, 1985
- Resonance Raman Scattering by Confined LO and TO Phonons in GaAs-AlAs SuperlatticesPhysical Review Letters, 1985
- Resonance Raman scattering by LO phonons in Te at the + gapPhysical Review B, 1985
- Folded acoustic and quantized optic phonons in (GaAl)As superlatticesPhysical Review B, 1985
- "Folded" optical phonons insuperlatticesPhysical Review B, 1984
- Raman scattering by two LO-phonons near Γ in GaAsSolid State Communications, 1981
- Mechanism of strong resonant 1LO Raman scatteringSolid State Communications, 1976
- Calculation of resonant second-order Raman efficiencies for allowed and forbidden scatteringPhysical Review B, 1974
- Resonant First- and Second-Order Raman Scattering in GaPPhysical Review B, 1973
- Optical Modes of Vibration in an Ionic Crystal SlabPhysical Review B, 1965