Resonant First- and Second-Order Raman Scattering in GaP
- 15 September 1973
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 8 (6) , 2795-2809
- https://doi.org/10.1103/physrevb.8.2795
Abstract
The dependence on laser frequency of the scattering cross section for allowed and forbidden first-order Raman scattering and for second-order scattering is presented. The measurements were performed in the vicinity of the and gaps. It is shown that the components of the Raman tensor exhibit a sharp resonance at while components resonate both at and . The results are interpreted in terms of a theory which assumes parabolic bands extending to infinity. The second-order scattering is produced mainly by electron-two-phonon interaction vertices, except for the strongly resonant sharp peaks which correspond to the creation of two LO phonons with and one LO plus one TO phonon with . From these measurements, values for the electron-two-phonon deformation potentials are obtained.
Keywords
This publication has 28 references indexed in Scilit:
- Multiphonon Raman Spectrum of SiliconPhysical Review B, 1973
- Evidence for intra-ionic anharmonicity in the Raman spectra of cubic ionic crystalsSolid State Communications, 1973
- Second-Order Raman Spectrum of GermaniumPhysical Review B, 1973
- Effect of hydrostatic pressure on the second order Raman spectrum of GaPSolid State Communications, 1973
- Raman scattering by siliconSolid State Communications, 1972
- Two-phonon Raman spectra of Si and GaPSolid State Communications, 1972
- The two phonon Raman spectra of alkali halide crystalsJournal of Physics C: Solid State Physics, 1972
- Quasiresonant Raman Scattering from TlBr CrystalsPhysical Review Letters, 1970
- Resonant Raman scattering in ZnS and ZnSe with the cadmium laserOptics Communications, 1970
- Resonant Raman Effect in SemiconductorsPhysical Review B, 1969