Low-temperature growth of InSb by vacuum MOCVD using TEln and SbH3
- 1 January 1988
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 17 (1) , 11-14
- https://doi.org/10.1007/bf02652225
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Characterization and Surface Cleaning Technique for MOCVD Growth-Interrupted GaAs FilmsJapanese Journal of Applied Physics, 1985
- Growth of InSb and InAs1 − x Sb x by OM‐CVDJournal of the Electrochemical Society, 1984
- Recollections and reflections of MO-CVDJournal of Crystal Growth, 1981
- Zur Reindarstellung des Antimon‐wasserstoffesEuropean Journal of Inorganic Chemistry, 1901