Ion-implanted extrinsic Ge photodetectors with extended cutoff wavelength

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Abstract
Far-infrared properties of a two-layer structure consisting of an ion-implantation doped layer on a thin ultrapure slice of germanium have been studied. Photoresponse extends beyond the shallow impurity absorption edge at 120 μm to about 192 μm. Photoconductivity studies have been performed between 4.2 and 1.3 K. Detectors with an area of 1×1 mm2 have dark currents of less than 100 electrons/s at temperatures ≤1.3 K at a bias of 70 mV. A responsivity of 0.9 A/W and a noise equivalent power of 5×10−16 W/Hz1/2 have been measured using photons in a narrow band 99±0.5 μm.