Tue low power dissipation Schottky barrier diode with trench structure
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifierIEEE Electron Device Letters, 1987
- Optimum design of power MOSFET'sIEEE Transactions on Electron Devices, 1984
- The pinch rectifier: A low-forward-drop high-speed power diodeIEEE Electron Device Letters, 1984