Forming electrical interconnections through semiconductor wafers
- 1 August 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (8) , 5340-5349
- https://doi.org/10.1063/1.329392
Abstract
To fabricate electrical interconnections through a semiconductor wafer, an array of holes is laser drilled in the wafer and then a conductor is formed in the holes. Six techniques, including capillary wetting, wedge extrusion, wire insertion, electroless plating, electroforming, and double-sided sputtering and through-hole electroplating were used to form conductors in the array of laser-drilled holes in silicon-on-sapphire (SOS) wafers. These techniques are described, and their respective strengths and weaknesses discussed and compared.This publication has 6 references indexed in Scilit:
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- Microelectronics and Computer ScienceScientific American, 1977
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- Suspended Particles in Fluid Flow Through TubesAnnual Review of Fluid Mechanics, 1971