44-GHz high-efficiency InP-HEMT MMIC power amplifier
- 1 August 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 4 (8) , 277-278
- https://doi.org/10.1109/75.311497
Abstract
A high-efficiency power amplifier was developed using 0.15-μm gatelength, InP-based (GaInAs/AlInAs/InP), HEMT MMIC technology. The amplifier demonstrated state-of-the-art performance. The output power at 1-dB compression point was 28 dBm at 44.5 GHz. The corresponding power-added efficiency was 31% and gain was 7 dB. The total chip area was 2.5 mm 2 .Keywords
This publication has 5 references indexed in Scilit:
- A unified analysis of MMIC power amplifier stabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A Ka-band HEMT MMIC 1 watt power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The effect of channel dimensions on the millimeter-wave power performance of a pseudomorphic HEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Ultra-high breakdown high-performance AlInAs/GaInAs/InP power HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-efficiency InP-based HEMT MMIC power amplifier for Q-band applicationsIEEE Microwave and Guided Wave Letters, 1993