High-efficiency InP-based HEMT MMIC power amplifier for Q-band applications
- 1 November 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 3 (11) , 420-422
- https://doi.org/10.1109/75.248519
Abstract
Advanced millimeter-wave systems require high efficiency MMIC power amplifiers to reduce physical size, weight, and prime power consumption. A high-efficiency MMIC power amplifier was developed using 0.15 um InP-based (Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As) HEMT MMIC technology. The amplifier demonstrated state-of-the-art power performance, including 33% power-added efficiency and 24 dBm output power at 44 GHz. Potential applications include communication terminals and phased array antennas.<>Keywords
This publication has 4 references indexed in Scilit:
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