Molecular beam epitaxial growth of InAs on a TlBaCaCuO superconducting film
- 29 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (5) , 490-492
- https://doi.org/10.1063/1.103297
Abstract
Results of growth of InAs on a superconducting TlCaBaCuO (2-1-2-2) thin film are reported. The InAs was grown by molecular beam migration-enhanced epitaxy at a substrate temperature of 250 °C. The Tc(zero) of the Tl film before and after InAs deposition was 106 and 100 K, respectively. X-ray diffraction and reflection electron microscopy studies showed the InAs to be polycrystalline, having grains in the 300 Å size range. This is the first report of deposition of a III-V semiconductor on superconductor, without significant degradation of Tc.Keywords
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