As-deposited Y-Ba-Cu-O superconducting films on silicon at 400 °C

Abstract
Y‐Ba‐Cu‐O thin films have been grown on silicon at a substrate temperature of 400 °C by plasma‐assisted laser deposition technique. These films were superconducting in an as‐deposited state. Films deposited directly on silicon and films with a MgO buffer layer differed in their superconducting properties. Films with a MgO layer showed higher critical temperatures (70 K) and higher critical currents (3×103 A/cm2 at 31 K) than films deposited directly on Si. Depth profiling by Auger and x‐ray photoelectron spectroscopy has been employed to study the diffusion and structural variation near the interface.