High temperature static and dynamic characteristics of 3.7 kV high voltage 4H-SiC JBS
- 7 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Doping of SiC by Implantation of Boron and AluminumPhysica Status Solidi (a), 1997
- Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge terminationIEEE Electron Device Letters, 1996