EL2 family in LEC and HB GaAs

Publisher Website
Google Scholar
Abstract
Studies on the electrical and optical properties of EL2 in various GaAs crystals are described especially in view of the family characteristics. A variation in the trap energy levels among the EL2 family is first reviewed. It is shown that the family characteristics are also observed in the photoquenching effect (transitions between the normal and the metastable states) as well as the transition rate to the excited state. Change of EL2 centers after heavy particle bombardment and low temperature annealing indicate that the defect structure responsible for EL2 is sizable, in which mobile interstitial As atom(s) are involved. Based on the experimental results, validity of the As-cluster model for the origin of EL2 is presented and correlated with the models proposed by other investigators