Chemical etching for the evaluation of hydrogenated amorphous silicon films
- 30 June 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (26) , 1783-1784
- https://doi.org/10.1063/1.96785
Abstract
Chemical etching using a 1:5:40 HF‐HNO3‐CH3COOH solution has been used for the evaluation of hydrogenated amorphous silicon (a‐Si:H) films. The dissolution rate of a‐Si: H films and the structural features brought out by etching have revealed significant differences in the properties of a‐Si:H films deposited in hydrogen and helium atmospheres. Unintentionally contaminated a‐Si: H films have also been found to show considerably higher dissolution rate than intrinsic films, and the dissolution rate measurements may be used to optimize the deposition conditions.Keywords
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