Semi-quantitative in situ Auger analysis of silicon nitride layers deposited by reactive ion beam sputtering
- 1 October 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 162 (1-3) , 695-701
- https://doi.org/10.1016/0039-6028(85)90968-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Surface chemical characterization by Auger signal decomposition: Silicon nitrideApplications of Surface Science, 1982
- The secondary electron emission coefficient of disordered surfacesSurface Science, 1980