Surface chemical characterization by Auger signal decomposition: Silicon nitride
- 31 July 1982
- journal article
- Published by Elsevier in Applications of Surface Science
- Vol. 11-12, 408-419
- https://doi.org/10.1016/0378-5963(82)90089-7
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Nitridation of Si(111) by nitrogen atomsSurface Science, 1981
- Chemical information from Auger electron spectroscopyJournal of Vacuum Science and Technology, 1981
- Hydrogen chemisorption on silicon (100) 2 × 1Surface Science, 1981
- Aes study of silicon bonding states during oxidation of Si(111)Surface Science, 1980
- Nitridation of silicon (111): Auger and LEED resultsJournal of Vacuum Science and Technology, 1980
- AES investigation of the chemical structure of silicon oxy-nitride filmsJournal of Vacuum Science and Technology, 1979
- Auger-Electron Spectroscopy as a Local Probe of Atomic Charge: SiPhysical Review Letters, 1978
- Transition density of states for Si(100) from L1L23V and L23VV Auger spectraSolid State Communications, 1977
- Theory of valence-band Auger line shapes: Ideal Si (111), (100), and (110)Physical Review B, 1977
- Abstract: Valence‐band density of states for Si and SiO2 using Auger electron spectroscopyJournal of Vacuum Science and Technology, 1976