Abstract
A numerical example is given of a semiconductor device model in one dimension, with constant carrier mobilities and dielectric constant, and no generation-recombination term, which nonetheless exhibits multiple stationary solutions. The device model considered has three p-n junctions, and has (at least) three solutions, two stable, one unstable, for values of applied voltage above a rather moderate threshold value. In this model, bifurcation of solutions does not occur; the I—V plot for this model contains two distinct curves, at least for values of applied voltage below breakdown.

This publication has 7 references indexed in Scilit: