Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions
- 9 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 103-106
- https://doi.org/10.1016/s0167-9317(97)00025-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Anode hole injection and trapping in silicon dioxideJournal of Applied Physics, 1996
- Light-emission mechanism of Si-MOS tunnel junctionsPhysical Review B, 1995
- Hot-carrier luminescence in SiPhysical Review B, 1992
- Photon emission from slightly roughened tunnel junctionsPhysical Review B, 1979