High voltage BiCDMOS technology on bonded 2 μm SOI integrating vertical npn pnp, 60 V-LDMOS and MPU, capable of 200°C operation
- 19 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 967-970
- https://doi.org/10.1109/iedm.1995.499377
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Comparison of junction-isolated and soi high-voltage devices operating in the source-follower modePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 200°C high-temperature and high-speed operation of 440 V lateral IGBTs on 1.5 μm thick SOIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002