200°C high-temperature and high-speed operation of 440 V lateral IGBTs on 1.5 μm thick SOI
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 687-690
- https://doi.org/10.1109/iedm.1993.347219
Abstract
This paper experimentally verifies that high-voltage lateral IGBTs fabricated on SOI of less than 5 /spl mu/m exhibit high switching speed without the need for any special device design. This paper also verifies, for the first time, that thin SOI is a promising candidate for 200/spl deg/C high-temperature operation, because switching speed does not deteriorate at high temperature.<>Keywords
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