Conduction mechanisms in bandtails at the SiSiO2 interface
- 1 August 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 58 (1) , 60-70
- https://doi.org/10.1016/0039-6028(76)90113-8
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- VI-1 carrier transport in tails of localized states at the Si-SiO2interfaceIEEE Transactions on Electron Devices, 1974
- Mott-Anderson Localization in the Two-Dimensional Band Tail of Si Inversion LayersPhysical Review Letters, 1974
- Peaked structure in field-effect mobility of silicon MOS transistors at very low temperaturesApplied Physics Letters, 1973
- Effective Medium Theory for the Hall Effect in Disordered MaterialsPhysical Review Letters, 1973
- Inhomogeneous Transport Regime in Disordered MaterialsPhysical Review Letters, 1973
- Semiclassical Theory of Electron Transport Properties in a Disordered MaterialPhysical Review A, 1972
- Percolation on a Continuum and the Localization-Delocalization Transition in Amorphous SemiconductorsPhysical Review B, 1971
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Thomas-Fermi Approach to Impure Semiconductor Band StructurePhysical Review B, 1963
- Hall Effect and Conductivity in Porous MediaJournal of Applied Physics, 1956