Structural characterization of epitaxial α-derivedon Si(111)
- 15 February 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (7) , 4725-4730
- https://doi.org/10.1103/physrevb.49.4725
Abstract
The tetragonal symmetry of epitaxial grains on Si(111) has been revealed for thin films (<40 Å) issued from two very different processes, which had in common a growth temperature of about 500 °C. The structure has been investigated by out-of-plane x-ray diffraction and transmission electron microscopy. An atomic model is proposed derived from the high-temperature α phase.
Keywords
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