Semiconducting silicide-silicon heterostructures: growth, properties and applications
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 56-58, 382-393
- https://doi.org/10.1016/0169-4332(92)90259-z
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Electronic structure of β-Physical Review B, 1990
- Bremsstrahlung-isochromat-spectroscopy and x-ray-photoelectron-spectroscopy investigation of the electronic structure of β-and the Fe/Si(111) interfacePhysical Review B, 1990
- Channeling of MeV ions in polyatomic epitaxial films:on Si(100)Physical Review B, 1990
- Photoluminescence in short-period Si/Ge strained-layer superlatticesPhysical Review Letters, 1990
- Energy-band structure ofepitaxially grown on Si(111)Physical Review B, 1988
- Localized epitaxial growth of CrSi2 on siliconJournal of Applied Physics, 1986
- Optical properties of semiconducting iron disilicide thin filmsJournal of Applied Physics, 1985
- Si-Beam Radiation Cleaning in Molecular-Beam EpitaxyJapanese Journal of Applied Physics, 1985
- DTA investigations on amorphous FeSi2Physica Status Solidi (a), 1974
- Mechanism of Electrical Conduction in β‐FeSi2Physica Status Solidi (b), 1968