Photoluminescence in short-period Si/Ge strained-layer superlattices
- 26 February 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (9) , 1055-1058
- https://doi.org/10.1103/physrevlett.64.1055
Abstract
Photoluminescence has been observed in the energy range 0.7 to 0.9 eV in short-period Si/Ge strained-layer superlattices grown on Si(100) and Ge(100) substrates. The luminescence is strongly influenced by period, layer-thickness ratio, and strain distribution. The experimental results are in good agreement with the expected fundamental energy gaps of the superlattices as calculated with a Kronig-Penney–type model.Keywords
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