High speed, ultralow noise, tensile strained InGaAlAsMQWlasers emitting at 1300 nm for optical communication andmicrowave applications
- 18 August 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (17) , 1413-1414
- https://doi.org/10.1049/el:19940974
Abstract
Tensile strained InGaAlAs multiquantum well lasers emitting at 1300 nm have been developed by using a ridge waveguide structure. The lasers demonstrate >20 GHz modulation bandwidth and very low relative intensity noise of –150 dBm/Hz. 10 dB improvement in optical link loss has been observed compared to previously reported results for microwave lasers in the InGaAsP system.Keywords
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