1.57 mu m strained-layer quantum-well GaInAlAs ridge-waveguide laser diodes with high temperature (130 degrees C) and ultrahigh-speed (17 GHz) performance

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Abstract
The fabrication of GaInAlAs strained-layer (SL) multiple-quantum-well (MQW) ridge-waveguide (RW) laser diodes emitting at 1.57 mu m is discussed. Due to an optimized layer structure, a very high characteristic temperature of 90 K was obtained. As a consequence for episide-up mounted devices, the maximum continuous wave (CW)-operation temperature is 130 degrees C. At room temperature, a maximum output power of 47 mW was measured for 600- mu m-long lasers with one high-reflection coated facet. The low series resistance of 4 Omega (2 Omega ) for 200- mu m-(400- mu m)-long devices yields an ultrahigh 3-dB bandwidth of 17 GHz. These static and dynamic properties also result from a high internal quantum-efficiency of 0.83 and a high differential gain of 5.5*10/sup -15/ cm/sup 2/.