Low threshold current MOVPE grown GaInAs-Al(Ga)InAs separate confinement heterostructure multiquantum well metal-clad ridge-waveguide lasers emitting at 1585 nm
- 1 September 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (9) , 609-611
- https://doi.org/10.1109/68.59326
Abstract
GaInAs-Al(Ga)InAs separate confinement heterostructure (SCH) multiquantum-well (MQW) metal-clad ridge-waveguide (MCRW) laser diodes were successfully fabricated for the first time from layer structures grown by atmospheric pressure (AP) metalorganic vapor-phase epitaxy (MOVPE) on InP substrate without any use of phosphine. CW operation of 2.9- mu m-wide and 400- mu m-long MCRW laser diodes emitting at 1585 nm was demonstrated with a minimum threshold current of 38 mA.Keywords
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