Schottky enhancement of reacted NiAl/n-GaAs contacts
- 20 June 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (25) , 3485-3487
- https://doi.org/10.1063/1.111248
Abstract
Schottky enhancement of reacted NiAl/n‐GaAs contacts was demonstrated experimentally. The Schottky barrier height increases from 0.83 eV for the as‐deposited contacts to 0.96 eV when the contacts were annealed at 400 °C for 1 min. Formation of a high Al content (Al,Ga)As layer at the interface upon annealing was rationalized in terms of a thermodynamic/kinetic model. A (200) dark field cross‐sectional transmission electron microscopy image was used to show the presence of high Al content (Al,Ga)As at the interface.Keywords
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