Time dependence of hot-carrier degradation in LDD nMOSFETs
- 31 October 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 15 (1-4) , 441-444
- https://doi.org/10.1016/0167-9317(91)90260-k
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Explanation and model for the logarithmic time dependence of p-MOSFET degradationIEEE Electron Device Letters, 1991
- Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETsIEEE Transactions on Electron Devices, 1988
- Hot-carrier drifts in submicrometer p-channel MOSFET'sIEEE Electron Device Letters, 1987