The conduction band structure and deep levels in Ga1-xAlxAs alloys from a high-pressure experiment
- 20 August 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (23) , 4323-4334
- https://doi.org/10.1088/0022-3719/13/23/018
Abstract
High-pressure Hall effect measurements on liquid phase epitaxial crystals of Ga1-xAlxAs with compositions in the range 0.23-6, (5.5+or-0.2)*10-6 and -1.5*10-6 eV bar-1 respectively. The implications of such a model on the conduction band structure of GaAs are discussed. The sub-band gap Delta EGamma X between the Gamma and X minima in GaAs is determined to be (0.485+or-0.007) eV at 300K. A deep impurity level in Ga1-xAlxAx has been determined from the pressure experiment to exist in crystals under pressure. For alloys with a high Ga content and before the Gamma -X crossover, the impurity level lies below the L minima at an energy of 205+or-5 meV. For pressures higher than that needed for the Gamma -X crossover, its impurity activation energy below the lowest-energy X minima decreases monotonically with pressure.Keywords
This publication has 31 references indexed in Scilit:
- 3-level conduction-band structure of GaAs from high-stress and high-field measurementsElectronics Letters, 1977
- GaAs lower conduction-band minima: Ordering and propertiesPhysical Review B, 1976
- High-field transport in gallium arsenide and indium phosphideJournal of Physics C: Solid State Physics, 1974
- Radiative recombination mechanisms in GaAsP diodes with and without nitrogen dopingJournal of Applied Physics, 1972
- Electrical Properties of-Type Epitaxial GaAs at High TemperaturesPhysical Review B, 1972
- Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy GapsJournal of Applied Physics, 1969
- A method for estimating the location of energy minima near the Brillouin zone boundary and its application to Gallium arsenidePhysics Letters A, 1969
- Optical Absorption due to Inter-Conduction-Minimum Transitions in Gallium ArsenidePhysical Review B, 1968
- Electron scattering mechanisms in n-type epitaxial GaPJournal of Physics and Chemistry of Solids, 1966
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960