Time dependence and optical quenching of photoluminescence in porous silicon
- 19 July 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (3) , 275-277
- https://doi.org/10.1063/1.110076
Abstract
We have investigated time dependence and light‐induced quenching of photoluminescence (PL) in porous Si samples. After excitation with a N2 laser pulse, a shift of the maximum of the emission band from 630 to 680 nm within a time interval of 3≤t≤100 μs was observed. A consistent description of the PL data is obtained by using a model based on three different electron‐hole recombination processes in the sample. Measurements of light‐induced quenching of PL show great similarities with fatigue of photocurrent in illuminated hydrogenated amorphous silicon.Keywords
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