Growth of highly uniform, reproducible InGaAs films in a multiwafer rotating disk reactor by MOCVD
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 445-451
- https://doi.org/10.1016/0022-0248(91)90501-u
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactorJournal of Crystal Growth, 1988
- MOCVD grown InP/InGaAs structures for optical receiversJournal of Crystal Growth, 1988
- A Numerical Model of the Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition ReactorJournal of Heat Transfer, 1987
- EFFECTS OF BOUNDARY CONDITIONS ON THE FLOW AND HEAT TRANSFER IN A ROTATING DISK CHEMICAL VAPOR DEPOSITION REACTORNumerical Heat Transfer, 1987