Direct intersubband optical absorption of semiconducting thin wire
- 1 September 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9) , 5482-5484
- https://doi.org/10.1063/1.332696
Abstract
The optical absorption due to direct intersubband transitions and including the broadening effects has been calculated by using an electric dipole approximation for a quasi-one-dimensional semiconducting thin wire. Effective mass approximation is adopted to determine the eigen functions and energies of the conduction electrons in Schrodinger equation by assuming a two-dimensional infinite potential well. When the electromagnetic wave is polarized in a ẑ direction which possesses a size-quantization effect in the thin wire, the selection rule requires that the sum of the quantum numbers of the initial state and finial state must be odd integers. ac and dc conductivities, and the absorption line shapes due to collisions are discussed.This publication has 13 references indexed in Scilit:
- Impurity-limited mobility of semiconducting thin wireJournal of Applied Physics, 1983
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982
- Summary Abstract: High mobility effect of electrons in ultrafine semiconductor wire structuresJournal of Vacuum Science and Technology, 1981
- Quantum size effect in semiconductor transportPhysical Review B, 1981
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics, 1980
- Electronic Properties of a Semiconductor Superlattice. I. Self-Consistent Calculation of Subband Structure and Optical SpectraJournal of the Physics Society Japan, 1979
- Size effects in E-beam fabricated MOS devicesIEEE Transactions on Electron Devices, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Effects of Quantum States on the Photocurrent in a "Superlattice"Physical Review Letters, 1975
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974