Structural and binding properties of vacancy clusters in silicon
- 15 September 1998
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 43 (6) , 695-700
- https://doi.org/10.1209/epl/i1998-00419-1
Abstract
By means of large-scale quantum simulations we investigate the formation and binding of vacancy clusters Vn in silicon for n ≤ 35. We show that different growth patterns exist and that an interplay between energy and topology arguments determines the most stable aggregates.Keywords
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