Flat-band voltage and surface states in amorphous silicon-based alloy field-effect transistors
- 15 July 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (2) , 382-386
- https://doi.org/10.1063/1.333976
Abstract
We propose a new technique to determine both the flat-band voltage and the characteristic energy of the deep localized states in amorphous silicon-based alloy field-effect transistors from their current-voltage characteristics. We also analyze the effects of surface states and show that they become important when their density is greater than 1011 cm−2 eV−1.This publication has 13 references indexed in Scilit:
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