Charge collection in M-S-M cadmium telluride detectors

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Abstract
The metal-semiconductor-metal (MSM) structure often used for cadmium telluride radiation detectors has been studied for etched and mechanically polished material. The band bending at the interfaces has been determined by looking at the spectral dependence of the photo-voltage and the I-V characteristics. An analysis of the electric field for a MSM, CdTe device shows that slower charge collection and, hence, poorer resolution than expected for a p-i-n detector, is obtained. Also the dark current is at best determined only by the resistivity of the material rather than by a barrier

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