Monolithic integration of GaAs light-emitting diodes and Si metal-oxide-semiconductor field-effect transistors
- 3 February 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (5) , 370-371
- https://doi.org/10.1063/1.96555
Abstract
A monolithic optoelectronic circuit, consisting of a GaAs light-emitting diode (LED) driven by a Si metal-oxide-semiconductor (MOS) transistor, has been fabricated. Light output as a function of applied gate voltage was measured. The LED’s were fabricated in GaAs layers on Ge-coated Si substrates containing MOS transistors. Normal transistor performance was observed after the GaAs LED fabrication, indicating that GaAs and Si processing technologies appear to be compatible.Keywords
This publication has 3 references indexed in Scilit:
- AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1984
- GaAs light-emitting diodes fabricated on Ge-coated Si substratesApplied Physics Letters, 1984
- GaAs Light Emitting Diodes Fabricated on SiO2/Si WafersJapanese Journal of Applied Physics, 1983