Enhanced carrier diffusion lengths and photon transport in AlxGa1−x As/GaAs structures
- 1 February 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (3) , 1483-1491
- https://doi.org/10.1063/1.345656
Abstract
Several novel features are observed in the low‐temperature photoluminescence spectra of AlxGa1−xAs layers grown on GaAs by metalorganic chemical vapor deposition. GaAs substrate luminescence spectra are observed through AlxGa1−xAs layers as thick as 22 μm. Both carrier diffusion to the substrate and AlxGa1−xAs luminescence are identified as the excitation mechanisms of the GaAs luminescence, and a minority‐carrier diffusion length of 10 μm is estimated. The presence of photon recycling in the AlxGa1−xAs layers is demonstrated by comparison of photoluminescence (PL) spectra for layers with and without GaAs substrates, as well as PL examination of two AlxGa1−xAs heterostructures.This publication has 21 references indexed in Scilit:
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