A 27 GHz 20 ps PNP technology
- 7 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 903-905
- https://doi.org/10.1109/iedm.1989.74201
Abstract
Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilaver in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.<>Keywords
This publication has 2 references indexed in Scilit:
- A submicrometer high-performance bipolar technologyIEEE Electron Device Letters, 1989
- Explosion of poly-silicide links in laser programmable redundancy for VLSI memory repairIEEE Transactions on Electron Devices, 1989