Explosion of poly-silicide links in laser programmable redundancy for VLSI memory repair
- 1 June 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (6) , 1056-1062
- https://doi.org/10.1109/16.24348
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Computer-simulated explosion of poly-silicide links in laser-programmable redundancy for VLSI memory repairIEEE Transactions on Electron Devices, 1989
- A review of fault-tolerant techniques for the enhancement of integrated circuit yieldProceedings of the IEEE, 1986
- Laser programmable redundancy and yield improvement in a 64K DRAMIEEE Journal of Solid-State Circuits, 1981
- A fault-tolerant 64K dynamic random-access memoryIEEE Transactions on Electron Devices, 1979