A physics-based modeling approach for the simulation of anomalous boron diffusion and clustering behaviors
- 23 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 493-496
- https://doi.org/10.1109/iedm.1997.650431
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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- Role of C and B clusters in transient diffusion of B in siliconApplied Physics Letters, 1996
- Implantation and transient B diffusion in Si: The source of the interstitialsApplied Physics Letters, 1994