A theory of generation-recombination noise from the velocity saturated channel of a GaAs MESFET
- 31 August 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (8) , 703-708
- https://doi.org/10.1016/0038-1101(81)90049-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Noise characteristics of gallium arsenide field-effect transistorsIEEE Transactions on Electron Devices, 1974
- Noise behavior of GaAs field-effect transistors with short gate lengthsIEEE Transactions on Electron Devices, 1972
- General theory for pinched operation of the junction-gate FETSolid-State Electronics, 1969