All-silicon optoelectronic modulator with 1 GHz switching capability
- 23 January 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (2) , 232-233
- https://doi.org/10.1049/el:20030136
Abstract
An optoelectronic modulator capable of 1.4 GHz maximum operation frequency is presented. The device comprises a pin diode embedded in a silicon-on-insulator rib waveguide where a Bragg grating is etched. By optimising the dimensions of the device and with a suitable choice of the driving signal, ultra-GHz switching has been achieved.Keywords
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