Oxygen Content and Depth Profiling in Silicon Surface Technology Studied by the16O(α, α)16O Resonance at 3.045 MeV
- 1 December 1978
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. 18 (6) , 353-356
- https://doi.org/10.1088/0031-8949/18/6/001
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Oxygen distribution profiles in thin evaporated contacts on single crystal siliconNuclear Instruments and Methods, 1978
- Enhanced Sensitivity of Oxygen Detection by The 3.05 MeV (α, α) Elastic ScatteringPublished by Springer Nature ,1976
- The Application of Low Angle Rutherford Backscattering to Surface Layer AnalysisPublished by Springer Nature ,1976
- A RADIOCHEMICAL TECHNIQUE FOR STUDYING RANGE–ENERGY RELATIONSHIPS FOR HEAVY IONS OF KEV ENERGIES IN ALUMINUMCanadian Journal of Chemistry, 1960