The Application of Low Angle Rutherford Backscattering to Surface Layer Analysis

This publication has 7 references indexed in Scilit:

• The optimization of a rutherford backscattering geometry for enhanced depth resolution
  Nuclear Instruments and Methods, 1975
• Range parameters of heavy ions at 10 and 35 keV in silicon
  Physics Letters A, 1975
• The measurement of Pb+ ion collection in Si by high depth-resolution Rutherford backscattering
  Physics Letters A, 1975
• On the annealing of damage produced by copper ion implantation of silicon single crystals
  Radiation Effects, 1974
• Line-shape extraction analysis of silicon oxide layers on silicon by channelling effect measurements
  Thin Solid Films, 1973
• Principles and applications of ion beam techniques for the analysis of solids and thin films
  Thin Solid Films, 1973
• An application of high energy-resolution scattering measurements in channeling studies
  Radiation Effects, 1972