The measurement of Pb+ ion collection in Si by high depth-resolution Rutherford backscattering
- 1 February 1975
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 51 (2) , 85-86
- https://doi.org/10.1016/0375-9601(75)90235-2
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Ion ImplantationAnnual Review of Materials Science, 1974
- Range and stopping power effects obtained from high resolution rutherford backscattering analysis of implanted targetsRadiation Effects, 1974
- Metallurgical applications of ion implantation and ion bombardmentVacuum, 1973
- The collection of ions implanted in semiconductors. II. range distributions derived from collection and sputter-etch curvesRadiation Effects, 1972
- Range and stopping-power tables for heavy ionsAtomic Data and Nuclear Data Tables, 1970